Charge trapping in SiO2/HfO2 gate dielectrics:: Comparison between charge-pumping and pulsed ID-VG

被引：31

作者：

Kerber, A

Cartier, E

Pantisano, L

Degraeve, R

Groeseneken, G

Maes, HE

Schwalke, U

机构：

[1] Infineon Technol AG, D-81739 Munich, Germany

[2] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA

[3] IMEC, Int SEMATECH, Austin, TX 78741 USA

[4] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[5] IMEC, B-3001 Louvain, Belgium

[6] Tech Univ Darmstadt, Inst Halbleitertech, D-64289 Darmstadt, Germany

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

D O I：

10.1016/j.mee.2004.01.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge-pumping (amplitude sweep) and the pulsed I-D-V-G technique have recently been introduced to study fast transient charging effects in alternative gate dielectrics. In this work, a detailed comparison between the two techniques is made using various experimental conditions. It is demonstrated that charge-pumping and pulsed I-D-V-G measurements yield equivalent results, when base level, charging times and device geometry are chosen carefully. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：267 / 272

页数：6

共 6 条

[1] Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks [J].