Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process

被引：261

作者：

Li, SY

Lee, CY

Tseng, TY ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30050, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 3-4期

关键词：

nanostructures; vapor-liquid-solid growth; zinc oxide nanowire; semiconducting materials; optical devices;

D O I：

10.1016/S0022-0248(02)01918-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The ZnO nanowires were synthesized using vapor liquid-solid (VLS) growth process on copper coated p-type Si (100) Substrate. Copper catalyzed the growth of ZnO nanowires of diameters 80-150 nm and lengths of 2.5-4.0 mum. The ZnO nanowires had hexagonal structure and exhibited <0002> orientation. The photoluminescence measurements showed that the ZnO nanowires had a strong ultraviolet emission at around 381 nm and a very weak green emission around 520 nm. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：357 / 362

页数：6

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