Fabricating semiconductor nano/microwires and transfer printing ordered arrays of them onto plastic substrates

被引:158
作者
Sun, YG
Rogers, JA [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Beckman Inst, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
关键词
D O I
10.1021/nl048835l
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ordered arrays of single-crystalline nano- and microwires of GaAs and InP with well-controlled lengths, widths, and cross-sectional shapes have been fabricated over large areas from high quality bulk wafers by the use of traditional photolithography and anisotropic, chemical wet etching. A printing technique using elastomeric stamps can transfer these wire arrays to plastic substrates, with excellent retention of order and crystallographic orientation of the wires. Electrical measurements on simple test structures demonstrate the high degree of mechanical flexibility of the resulting wire arrays on plastics. The combination of "top down" wire fabrication and "dry" transfer printing might represent an effective route to ultrahigh performance macroelectronic systems.
引用
收藏
页码:1953 / 1959
页数:7
相关论文
共 54 条
  • [31] HIGH-LUMINOSITY BLUE AND BLUE-GREEN GALLIUM NITRIDE LIGHT-EMITTING-DIODES
    MORKOC, H
    MOHAMMAD, SN
    [J]. SCIENCE, 1995, 267 (5194) : 51 - 55
  • [32] ON THE AGING OF OXYGEN PLASMA-TREATED POLYDIMETHYLSILOXANE SURFACES
    MORRA, M
    OCCHIELLO, E
    MAROLA, R
    GARBASSI, F
    HUMPHREY, P
    JOHNSON, D
    [J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1990, 137 (01) : 11 - 24
  • [33] Luminescence photophysics in semiconductor nanocrystals
    Nirmal, M
    Brus, L
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 1999, 32 (05) : 407 - 414
  • [34] Nanobelts of semiconducting oxides
    Pan, ZW
    Dai, ZR
    Wang, ZL
    [J]. SCIENCE, 2001, 291 (5510) : 1947 - 1949
  • [35] Sharp exciton emission from single InAs quantum dots in GaAs nanowires
    Panev, N
    Persson, AI
    Sköld, N
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (11) : 2238 - 2240
  • [36] STUDY OF MESA UNDERCUTS PRODUCED IN GAAS WITH H3PO4-BASED ETCHANTS
    RAMAM, A
    KAPOOR, S
    PRABHAKAR, S
    GULATI, R
    CHANDRA, I
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) : 2405 - 2410
  • [37] HIGH-POWER LASER-DIODES BASED ON INGAASP ALLOYS
    RAZEGHI, M
    [J]. NATURE, 1994, 369 (6482) : 631 - 633
  • [38] Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design
    Ribas, RP
    Leclercq, JL
    Karam, JM
    Courtois, B
    Viktorovitch, P
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 267 - 273
  • [39] All-inorganic field effect transistors fabricated by printing
    Ridley, BA
    Nivi, B
    Jacobson, JM
    [J]. SCIENCE, 1999, 286 (5440) : 746 - 749
  • [40] Roark R., 1989, ROARKS FORMULAS STRE