STUDY OF MESA UNDERCUTS PRODUCED IN GAAS WITH H3PO4-BASED ETCHANTS

被引：6

作者：

RAMAM, A

KAPOOR, S

PRABHAKAR, S

GULATI, R

CHANDRA, I

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

D O I：

10.1149/1.2097384

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2405 / 2410

页数：6

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共 10 条

[1] EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
ROZGONYI, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1346 - &
[2] CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
GANNON, JJ
NUESE, CJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1215 - 1219
[3] IIDD S, 1971, J ELECTROCHEM SOC, V118, P768
[4] NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
MORI, Y
WATANABE, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1510 - 1514
[5] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS
OTSUBO, M
ODA, T
KUMABE, H
MIKI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 676 - 680
[6] LOCALIZED GAAS ETCHING WITH ACIDIC HYDROGEN-PEROXIDE SOLUTIONS
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 874 - 880
[7] ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 958 - &
[8] THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL
SULLIVAN, MV
KOLB, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 585 - 587
[9] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS
TARUI, Y
KOMIYA, Y
HARADA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 118 - &
[10] FABRICATION OF VIA HOLES IN 200-MU-M THICK GAAS WAFERS
YENIGALLA, SP
GHOSH, CL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : 1377 - 1378