Convergent beam electron diffraction and transmission electron microscopy study of interfacial defects in gallium nitride homoepitaxial films

被引：20

作者：

LilientalWeber, Z ^{[1
]}

Washburn, J ^{[1
]}

Pakula, K ^{[1
]}

Baranowski, J ^{[1
]}

机构：

[1] UNIV WARSAW,INST EXPT PHYS,PL-00681 WARSAW,POLAND

来源：

MICROSCOPY AND MICROANALYSIS | 1997年 / 3卷 / 05期

关键词：

homoepitaxial GaN; crystal polarity; pinholes; inversion domains; threading dislocations; convergent beam electron diffraction; GAN; SAPPHIRE; CRYSTALS; DIODES;

D O I：

10.1017/S1431927697970331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy (TEM) and convergent beam electron diffraction (CBED) have been used to study defects formed in homoepitaxial gallium nitride (GaN) layers grown by metal-organic-chemical vapor deposition (MOCVD) on GaN bulk single crystals obtained from Ga melt under high hydrostatic pressure of nitrogen. These layers grown on both sides of the GaN platelets were therefore grown with the two opposite polarities confirmed by CBED studies. It was shown that the layers repeat the substrate polarity. Different types of defects were observed for the growth in the opposite polar directions. Growth rate hierarchy for different growth directions and the origin of pinholes formed in these layers were determined.

引用

页码：436 / 442

页数：7

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