Periodic doping of GaAs:Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy

被引：2

作者：

Hirose, J

Suemune, I

Ueta, A

Machida, H

Shimoyama, N

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Kita Ku, Sapporo, Hokkaido 0600812, Japan

[2] Trichem Lab, Yamanashi 4090112, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

accepters; doping; ZnSe; MOMBE; GaAs; clusters;

D O I：

10.1016/S0022-0248(00)00144-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitrogen (N) acceptor doping in ZnSe has been difficult with metalorganic vapor-phase epitaxy or metalorganic molecular-beam epitaxy (MOMBE) due to the neutralization effect by the N-hydrogen bonding. Doping of nano-clusters of p-type GaAs in ZnSe is proposed for realizing p-type ZnSe. A initial growth process of GaAs on ZnSe surfaces was studied to realize the doping of GaAs nano-clusters. A net acceptor concentration of 1 x 10(17) cm(-3) was observed by this method with MOMBE. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：524 / 528

页数：5

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