Low-temperature selective growth of ZnSe and ZnS on (001) GaAs patterned with carbonaceous mask by metalorganic molecular-beam epitaxy

被引：14

作者：

Ueta, A

Avramescu, A

Uesugi, K

Suemune, I

Machida, H

Shimoyama, N

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 060, Japan

[2] Trichem Lab, Yamanashi 40901, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 3A期

关键词：

MOMBE; selective growth; ZnSe; ZnS; GaAs; carbonaceous mask;

D O I：

10.1143/JJAP.37.L272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective growth of ZnSe and ZnS on (001) GaAs substrates patterned with a carbonaceous mask was examined by metalorganic molecular-beam epitaxy. The minimum growth temperature to achieve selective growth of ZnSe was 400 degrees C, while that for ZnS was the lower temperature of 300 degrees C. These growth temperatures for selective growth are much lower than those reported up to now. The carbonaceous masks were deposited by electron-beam irradiation, and the deposition processes will be discussed in some detail. Submicron resolution with this low-temperature selective growth will be demonstrated.

引用

页码：L272 / L274

页数：3

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