The characteristics of different transparent electrodes on GaN photodetectors

被引：12

作者：

Chiou, YZ

Chiou, JR

Su, YK

Chang, SJ ^{[1
]}

Huang, BR

Chang, CS

Lin, YC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Dept Elect Engn, Touliu 640, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 80卷 / 01期

关键词：

GaN; ITO; TiN; BST; UV; photodetector;

D O I：

10.1016/S0254-0584(02)00483-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The sputter ITO, TiN and E-gun ITO films deposited onto GaN as the transparent electrodes in the application of metal-semiconductor-metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E-gun ITO films for thickness of 1000 Angstrom was 94, 62 and 85%, respectively, at a wavelength of 400 nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E-gun ITO films to GaN was 0.46, 0.59 and 0.95 eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E-gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5 V bias, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：201 / 204

页数：4

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