Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

被引：166

作者：

Zhang, H

Chung, SW

Mirkin, CA

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Inst Nanotechnol, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 01期

关键词：

D O I：

10.1021/nl0258473

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.

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收藏

页码：43 / 45

页数：3

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