Nonvolatile memory devices based on few-layer graphene films

被引：50

作者：

Doh, Yong-Joo ^{[3
,4
]}

Yi, Gyu-Chul ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Seoul 151747, South Korea

[3] Korea Univ, Dept Display & Semicond Phys, Chungnam Do 339800, South Korea

[4] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 10期

关键词：

LARGE-AREA; FIELD; GAS;

D O I：

10.1088/0957-4484/21/10/105204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.

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页数：5

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