New photoresist coating method for 3-D structured wafers

被引：32

作者：

Kutchoukov, VG ^{[1
]}

Mollinger, JR ^{[1
]}

Bossche, A ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, ITS, Lab Elect Instrumentat,ET, NL-2628 CD Delft, Netherlands

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 85卷 / 1-3期

关键词：

photoresist; spinning; coating; wafer through-hole; corner smoothening; micromachining;

D O I：

10.1016/S0924-4247(00)00416-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a method for the uniform coating with standard photoresist of a [100] semiconductor wafer containing anisotropically wet-etched through-holes. The coating method is based on photoresist dispensing on the mask opening side of the wafer and spinning the wafer from both sides in saturated photoresist solvent atmosphere. Special attention is paid to the improvement of photoresist coverage of the obtuse holes' corners by rounding them first in TMAH solution. The method offers the possibility for realisation of different structures in wafer through-holes. Moreover, it could also be applied for spinning photoresist in grooves with very good uniformity, which requires minimal changes in the standard coating equipment. The method is simple, fast and low-cost in comparison with other photoresist coating techniques. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：377 / 383

页数：7

共 12 条

[1] High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through
Burger, GJ
Smulders, EJT
Berenschot, JW
Lammerink, TSJ
Fluitman, JHJ
Imai, S
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1996, 54 (1-3) : 669 - 673
[2] Wafer through-hole interconnections with high vertical wiring densities
Christensen, C
Kersten, P
Henke, S
Bouwstra, S
[J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1996, 19 (04): : 516 - 522
[3] Furst A, 1999, SOLID STATE TECHNOL, V42, P24
[4] Conformal coating by photoresist of sharp corners of anisotropically etched through-holes in silicon
Heschel, M
Bouwstra, S
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1998, 70 (1-2) : 75 - 80
[5] HESCHEL M, 1997, 1997 INT C SOL STAT, P209
[6] A study of two-step silicon anisotropic etching for a polygon-shaped microstructure using KOH solution
Kang, IB
Haskard, MR
Samaan, ND
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1997, 62 (1-3) : 646 - 651
[7] Photolithography on micromachined 3D surfaces using electrodeposited photoresists
Kersten, P
Bouwstra, S
Petersen, JW
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1995, 51 (01) : 51 - 54
[8] LINDER S, 1996, THESIS ETH ZURICH
[9] LINDER S, P MEMS 94, P349
[10] Luxbacher T, 1999, HIGH DENSITY INTERCO, V2, P36

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