High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition

被引：85

作者：

Chen, XH

Xu, J

Wang, RM

Yu, DP ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 05期

关键词：

D O I：

10.1002/adma.200390097

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaN nanowires with diameters in the quantum-confinement size regime (4-10 nm, similar to10 nm in Figure) are prepared on large-area substrates through catalytic reaction of Ga and NH3 in a hot-filament chemical vapor deposition system. The synthetic method is reproducible and could be applied to the growth of other semiconductor nanostructures.

引用

页码：419 / +

页数：4

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