Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors

被引：51

作者：

Boudinet, D. ^{[1
]}

Benwadih, M. ^{[1
]}

Altazin, S. ^{[1
]}

Gwoziecki, R. ^{[1
]}

Verilhac, J. M. ^{[1
]}

Coppard, R. ^{[1
]}

Le Blevennec, G. ^{[1
]}

Chartier, I. ^{[1
]}

Horowitz, G. ^{[2
]}

机构：

[1] CEA LITEN LCI, F-38054 Grenoble, France

[2] Univ Paris Diderot, CNRS, UMR 7086, ITODYS, F-75205 Paris 13, France

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 02期

关键词：

Organic thin-film transistor; Contact resistance; Semi-conductor thickness; THRESHOLD VOLTAGE; PENTACENE; MONOLAYERS; TRANSPORT;

D O I：

10.1016/j.orgel.2009.11.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we report on the influence of the semi-conductor thickness on organic thin. film transistors (OTFTs). Devices are fabricated with a top gate/bottom contact geometry on plastic substrates. Both n-channel and p-channel OTFTs made, respectively, from a N,N-dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative (Polyera ActivInk (TM) N1400) and from 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) are studied and compared. Impact of the active semiconducting layer thickness on both contact resistance and mobility are uncorrelated by the use of the transfer line method (TLM). When increasing the thickness of the semi-conductor, we find an increasing contact resistance and a decreasing channel mobility for both n- and p-channel OTFTs. The loss of mobility with increased thickness is attributed to a degradation of the interface between the semi-conductors and the dielectric, and is studied by atomic force microscope (AFM). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：291 / 298

页数：8

共 36 条

[1] Functionalized pentacene: Improved electronic properties from control of solid-state order [J].