p-n semiconductor membrane for electrically tunable ion current rectification and filtering

被引:83
作者
Gracheva, Maria E. [1 ]
Vidal, Julien [1 ]
Leburton, Jean-Pierre [1 ]
机构
[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
D O I
10.1021/nl0707104
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We show that a semiconductor membrane made of two thin layers of opposite (n- and p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore combined with a transport model. It predicts that, for appropriate biasing of the membrane-electrolyte system, transitions from ohmic behavior to sharp rectification with vanishing leakage current are achievable. Furthermore, ion current rectifying and filtering regimes of the nanopore correspond to different charge states in the p-n membrane, which can be tuned with appropriate biasing of the n- and p- layers.
引用
收藏
页码:1717 / 1722
页数:6
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