Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots

被引：10

作者：

Mirin, RP ^{[1
]}

Silverman, KL ^{[1
]}

Christensen, DH ^{[1
]}

Roshko, A ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Div Optoelect, Boulder, CO 80303 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InGaAs quantum dots have been grown using alternating molecular beams of In, Ga, and As-2. The size distribution changes from bimodal to monodisperse as the quantum dots grow larger. Room-temperature photoluminescence experiments on ensembles of these quantum dots show that the emitted intensity remains high as the center wavelength changes from about 1130 to 1345 nm. The linewidths are less than 30 meV for all samples studied, with the narrowest measured linewidth being 18 meV at a peak emission energy of 930.1 meV (1333 nm). [S0734-211X(00)09703-1].

引用

页码：1510 / 1513

页数：4

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