Microstructure, dielectric properties and hydrogen gas sensitivity of sputtered amorphous Ba0.67Sr0.33TiO3 thin films

被引:55
作者
Chen, XF [1 ]
Zhu, WG [1 ]
Tan, OK [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 77卷 / 02期
关键词
ferroelectric thin film; hydrogen gas sensor; barium strontium titanate;
D O I
10.1016/S0921-5107(00)00484-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel metal-ferroelectric hydrogen gas sensing device was fabricated on platinum-coated silicon wafer with an amorphous ferroelectric Ba0.67Sr0.33TiO3 layer using the RF magnetron co-sputtering process and was characterized by X-ray diffraction, transmission electron microscopy, dielectric characterization and gas sensing measurement. Experimental results show that the microstructure and the dielectric properties are closely correlated with the deposition parameters. The studies on the dielectric properties indicate that the non-stoichiometric defects in the amorphous films are largely reduced by depositing in 50% oxygen content just below the crystallization temperature of the films. J-E performances exhibit the typical Schottky behavior, both in air and in hydrogen gas and a voltage shift 0.6 V has been observed in 1042 ppm hydrogen diluted in air. Compared to the sol-gel case, it is believed that the electronic defects, both in bulk and at interface, cause the degradation of the hydrogen gas sensitivity and weaken the induced H-2 potential built-up across the space charge layer at the interface. The gas sensing mechanism based on the proton induced Pd/BST interfacial polarization potential is also discussed. Related to the MIS hydrogen sensor device, it is believed that the high permittivity of the amorphous ferroelectric thin films enhances the proton polarization at the Pd/BST interface and, ill turn, greatly improves the built-up interfacial potential induced by the hydrogen. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:177 / 184
页数:8
相关论文
共 24 条
[1]   Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Nagaraj, B ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3023-3025
[2]   Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].
Aggarwal, S ;
Perusse, SR ;
Tipton, CW ;
Ramesh, R ;
Drew, HD ;
Venkatesan, T ;
Romero, DB ;
Podobedov, VB ;
Weber, A .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :1973-1975
[3]   GAS SENSORS FOR HIGH-TEMPERATURE OPERATION BASED ON METAL-OXIDE-SILICON CARBIDE (MOSIC) DEVICES [J].
ARBAB, A ;
SPETZ, A ;
LUNDSTROM, I .
SENSORS AND ACTUATORS B-CHEMICAL, 1993, 15 (1-3) :19-23
[4]  
Arbab A., 1993, SENSOR MATER, V4, P173
[5]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[6]   A model of the Temkin isotherm behavior for hydrogen adsorption at Pd-SiO2 interfaces [J].
Eriksson, M ;
Lundstrom, I ;
Ekedahl, LG .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3143-3146
[7]   Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor [J].
Eriksson, M ;
Ekedahl, LG .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :3947-3951
[8]   Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films [J].
Han, JP ;
Ma, TP .
APPLIED PHYSICS LETTERS, 1997, 71 (09) :1267-1269
[9]   Ti-O coordination at a Pb(Zr,Ti)O3/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy [J].
Ikarashi, N ;
Hosoi, N .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7874-7878
[10]   Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors [J].
Im, J ;
Auciello, O ;
Krauss, AR ;
Gruen, DM ;
Chang, RPH ;
Kim, SH ;
Kingon, AI .
APPLIED PHYSICS LETTERS, 1999, 74 (08) :1162-1164