Mirror-Image Photoswitching in a Single Organic Thin-Film Transistor

被引：17

作者：

Shen, Qian ^{[1
]}

Cao, Yang ^{[1
]}

Liu, Song ^{[1
]}

Gan, Lin ^{[1
]}

Li, Jianming ^{[1
]}

Wang, Zhenxing ^{[1
]}

Hui, Jingshu ^{[1
]}

Guo, Xuefeng ^{[1
]}

Xu, Dongsheng ^{[1
]}

Liu, Zhongfan ^{[1
]}

机构：

[1] Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 08期

关键词：

BIAS STRESS; TRANSPORT; ELECTRON;

D O I：

10.1021/jz100293z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we detailed our design for making a photoactive semiconductor/dielectric interface in order to study charge dynamics at the interface in combination with photoexcitation, using organic thin-film transistors (OTFTs) as local probes. The photoactive semiconductor/dielectric interface is formed from a hybrid gate dielectric (polymethyl methacrylate (PMMA) and titanium oxide (TiO2)). Because the photogenerated electrons from TiO2 nanoparticles under UV illumination can serve as the trapping centers for quenching hole carriers, p-type semiconductors showed the decrease of the hole mobility. Interestingly, n-type semiconductors displayed symmetric, opposing photoswitching effects at the same condition, showing that the photogenerated holes can function as a local positive gate voltage for improving the electron mobility. On the basis of this understanding, a remarkable example of mirror-image photoswitching effects in a single ambipolar OTFT was realized. These results may offer grounds for the creation of the future practical/multifunctional organic optoelectronic devices.

引用

页码：1269 / 1276

页数：8

共 36 条

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