Formation of ultra-thin PtSi layers with a 2-step silicidation process

被引：10

作者：

Donaton, RA

Jin, S

Bender, H

Zagrebnov, M

Baert, K

Maex, K

Vantomme, A

Langouche, G

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Catholic Univ Louvain, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期

关键词：

PtSi; sputtering; RTP; Schottky barrier height;

D O I：

10.1016/S0167-9317(97)00153-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of a 2-step silicidation process to form ultra-thin layers of PtSi is shown. Continuous PtSi layers down to 3 nm thick are formed after sputter deposition of a thick Pt layer and subsequent RTP step followed by a selective etch and a second RTP step. A Pt/Pt2Si/PtSi layered structure is formed after the first RTP step. PtSi/p-Si diodes formed using this method showed an ideality factor close to unity and the barrier height was found to be 0.234 eV.

引用

收藏

页码：507 / 514

页数：8

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