High-voltage (>2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers

被引：12

作者：

Kimoto, T ^{[1
]}

Wahab, Q

Ellison, A

Forsberg, U

Tuominen, M

Yakimova, R

Henry, A

Janzen, E

机构：

[1] Linkoping Univ, IFM, S-58183 Linkoping, Sweden

[2] ABB Corp Res, S-72178 Vasteras, Sweden

[3] Outokumpu Semitr AB, S-17824 Ekero, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

Schottky diode; high-power device; edge termination; on-resistance;

D O I：

10.4028/www.scientific.net/MSF.264-268.921

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-voltage Ni/4H-SiC Schottky rectifiers have been fabricated on thick low-doped epilayers grown by hot-wall chemical vapor deposition (CVD) or high-temperature CVD (HTCVD). A metal overlap onto an oxide layer was employed to reduce electric field crowding at the contact periphery. By utilizing a 42 mu m-thick epilayer doped to 1 similar to 2x10(15)cm(-3), a record blacking voltage of 3.0kV was achieved. The reverse leakage current was very low, 7x10(-7)A/cm(2) at -1.0kV (2.8kV diode). Specific on-resistance was 34m Omega cm(2) for a 3.0kV diode. A high breakdown voltage of 2.6kV was also attained for a diode processed on an HTCVD layer.

引用

页码：921 / 924

页数：4

High-voltage (&gt;2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers

High-voltage (>2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers