Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism

被引：174

作者：

Meyer, J. ^{[1
]}

Kroeger, M. ^{[2
]}

Hamwi, S. ^{[3
]}

Gnam, F. ^{[2
]}

Riedl, T. ^{[4
]}

Kowalsky, W. ^{[3
]}

Kahn, A. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] InnovationLab GmbH, D-69115 Heidelberg, Germany

[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, D-38106 Braunschweig, Germany

[4] Univ Wuppertal, Inst Elect Devices, D-42119 Wuppertal, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

基金：

美国国家科学基金会;

关键词：

caesium compounds; conduction bands; doping; electron mobility; hole mobility; organic compounds; photoelectron spectra; tungsten compounds; ultraviolet spectra; LIGHT-EMITTING DEVICES;

D O I：

10.1063/1.3427430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energetics of an archetype charge generation layer (CGL) architecture comprising of 4,4',4 ''-tris(N-carbazolyl)triphenylamine (TCTA), tungsten oxide (WO3), and bathophenanthroline (BPhen) n-doped with cesium carbonate (Cs2CO3) are determined by ultraviolet and inverse photoemission spectroscopy. We show that the charge generation process occurs at the interface between the hole-transport material (TCTA) and WO3 and not, as commonly assumed, at the interface between WO3 and the n-doped electron-transport material (BPhen:Cs2CO3). However, the n-doped layer is also essential to the realization of an efficient CGL structure. The charge generation mechanism occurs via electron transfer from the TCTA highest occupied molecular orbital level to the transition metal-oxide conduction band. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427430]

引用

页数：3

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