Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra

被引：15

作者：

Ishitani, Y ^{[1
]}

Xu, K

Che, SB

Masuyama, H

Terashima, W

Yoshitani, M

Hashimoto, N

Akasaka, K

Ohkubo, T

Yoshikawa, A

机构：

[1] Chiba Univ, Dept Elect & Engn, Chiba, Japan

[2] Chiba Univ, Ctr Frontier Elect & Photon, Chiba, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 12期

关键词：

D O I：

10.1002/pssb.200405097

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InN crystals are grown on sapphire substrates using a plasma-assisted MBE system. The carrier concentrations of the samples are 2 x 10(18-1) x 10(19) cm(-3). Optical transmission and reflectance measurements are performed on these samples in the temperature range 5-300 K. The resultant spectra are analysed by theoretical spectra based on the LO-phonon-plasmon coupling scheme for the phonon-related factor and non-parabolic conduction band structure for the electronic transition factor. The observed absorption edge is estimated to originate from a valence band to conduction band transition rather than a defect- or impurity-related transition. It is estimated that InN has a bandgap energy in the range 0.59-0.65 eV.

引用

页码：2849 / 2853

页数：5

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