Structure of excited-state transitions of individual semiconductor nanocrystals probed by photoluminescence excitation spectroscopy

被引:39
作者
Htoon, H [1 ]
Cox, PJ [1 ]
Klimov, VI [1 ]
机构
[1] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA
关键词
D O I
10.1103/PhysRevLett.93.187402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We perform for the first time photoluminescence excitation (PLE) studies of individual nanocrystals (NCs) that reveal the structure of excited-state transitions not obscured by ensemble averaging. Single-NC PLE spectra strongly deviate from a traditional idealized picture of sharp, quasiatomic resonances. We detect only a few relatively narrow transitions (3-4 meV) at the band edge, while at higher spectral energies, we observe a broad structureless feature separated from the band-edge peaks by a >50 meV "minigap." These observations can be rationalized by analyzing hole intraband relaxation behavior.
引用
收藏
页码:187402 / 1
页数:4
相关论文
共 17 条
[1]   Excited-state spectroscopy of InP quantum dots [J].
Bertram, D ;
Micic, OI ;
Nozik, AJ .
PHYSICAL REVIEW B, 1998, 57 (08) :R4265-R4268
[2]   Photoluminescence wandering in single CdSe nanocrystals [J].
Blanton, SA ;
Hines, MA ;
GuyotSionnest, P .
APPLIED PHYSICS LETTERS, 1996, 69 (25) :3905-3907
[3]   Prediction of a shape-induced enhancement in the hole relaxation in nanocrystals [J].
Califano, M ;
Bester, G ;
Zunger, A .
NANO LETTERS, 2003, 3 (09) :1197-1202
[4]  
Conwell E. M., 1967, HIGH FIELD TRANSPORT
[5]   Multiple temperature regimes of radiative decay in CdSe nanocrystal quantum dots: Intrinsic limits to the dark-exciton lifetime [J].
Crooker, SA ;
Barrick, T ;
Hollingsworth, JA ;
Klimov, VI .
APPLIED PHYSICS LETTERS, 2003, 82 (17) :2793-2795
[6]   Random telegraph signal in the photoluminescence intensity of a single quantum dot [J].
Efros, AL ;
Rosen, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1110-1113
[7]   Photoluminescence spectroscopy of single CdSe nanocrystallite quantum dots [J].
Empedocles, SA ;
Norris, DJ ;
Bawendi, MG .
PHYSICAL REVIEW LETTERS, 1996, 77 (18) :3873-3876
[8]  
Gaponenko S.V., 1998, OPTICAL PROPERTIES S
[9]  
Klimov V., 2003, SEMICONDUCTOR METAL
[10]  
Klimov V.I., 2003, SEMICONDUCTOR METAL