Ultraviolet light emission from oxidized porous silicon

被引：39

作者：

Lin, J

Yao, GQ

Duan, JQ

Qin, GG

机构：

[1] BEIJING UNIV,DEPT CHEM,BEIJING 100871,PEOPLES R CHINA

[2] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0038-1098(95)00650-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ultraviolet light emission with wavelength of 360-370 nm has been observed from porous silicon ( PS) samples properly oxidized at high temperature. The intensity rather than the peak location of ultraviolet light varies with anodization conditions and the oxidation temperature. Both thermal treatment in nitrogen and oxidation at 1150 degrees C can severely reduce the intensity of ultraviolet light, but the effect of the latter is stronger than that of the former. It is concluded that both the nanoscale silicon particles and the luminescence centers in Si oxide layers covering them play the key role in the ultraviolet light emission from PS.

引用

收藏

页码：221 / 224

页数：4

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