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X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering

被引：166
作者：
Jacobsohn, LG
Schulze, RK
da Costa, MEHM
Nastasi, M
机构：
[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA
[2] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453970 Rio De Janeiro, Brazil
来源：
SURFACE SCIENCE | 2004年 / 572卷 / 2-3期
关键词：
x-ray photoelectron spectroscopy; sputter deposition; boron; carbon;
D O I：
10.1016/j.susc.2004.09.020
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The interpretation of the surface chemical states of amorphous boron carbide films as revealed by X-ray photoelectron spectroscopy (XPS) is investigated in this work. Films were deposited by dc-magnetron sputtering and characterized by XPS employing sputter-cleaning and angle-resolved detection. Our results indicate that the intrinsic chemical states of boron carbide occur at similar to282.8 and similar to188.6. eV in the C-1s and B-1s lines, respectively, and that all other observed states are related to contamination due to exposure to ambient conditions. Structural modifications known to occur due to post-deposition annealing could not be observed by XPS, pointing to limitations of this technique. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：418 / 424
页数：7
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