High resolution XPS study of oxide layers grown on Ge substrates

被引：77

作者：

Tabet, N ^{[1
]}

Faiz, M

Hamdan, NM

Hussain, Z

机构：

[1] King Fahd Univ Petr & Minerals, Dept Phys, Surface Sci Lab, Dhahran 31261, Saudi Arabia

[2] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

SURFACE SCIENCE | 2003年 / 523卷 / 1-2期

关键词：

germanium; oxidation; surface electronic phenomena (work function; surface potential; surface states; etc.); X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(02)02354-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High resolution X-ray photoelectron spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide/germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen correspond to GeO2 composition. Under Ar etching, lower oxidation states were revealed. Short in situ heat treatment at T = 673 K under ultrahigh vacuum leads to the removal of the oxide layer. In addition, the analysis of the layer grown at T = 653 K under dry oxygen suggests that carbides form at the oxide/substrate interface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：68 / 72

页数：5

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