A STUDY OF CONTAMINANT OVERLAYER ON GE(100) SURFACE USING KINETIC RESOLVED XPS

被引：10

作者：

WEI, Y ^{[1
]}

SULLIVAN, JL ^{[1
]}

SAID, SO ^{[1
]}

机构：

[1] UNIV ASTON,DEPT ELECTR ENGN & APPL PHYS,BIRMINGHAM B4 7ET,W MIDLANDS,ENGLAND

来源：

VACUUM | 1994年 / 45卷 / 05期

关键词：

D O I：

10.1016/0042-207X(94)90260-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper describes an X-ray photoelectron spectroscopic study of the contaminant film on a single crystal Ge(100) surface after long exposure to the atmosphere and after low energy argon ion bombardment. An energy resolved method is demonstrated in the calculation of overlayer thickness with XPS measurements from the sample. The advantages of the energy resolved method are discussed in comparison to the generally more accepted method of angular resolved XPS for the measurement of thin film thicknesses. Ion bombardment is found not only to reduce the thickness of the overlayer, but also to change its character through chemical reduction of the oxide due to preferential sputtering of oxygen.

引用

页码：597 / 601

页数：5

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