Laser ablation preparation and property of bismuth-layer-structured SrBi2Ta2O9 and Bi4Ti3O12 ferroelectric thin films

被引：4

作者：

Okuyama, M

Wu, WB

Oishi, Y

Hamakawa, Y

机构：

[1] Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560

来源：

INTEGRATED FERROELECTRICS | 1996年 / 12卷 / 2-4期

关键词：

bismuth-layer-structured ferroelectric thin films; SrBi2Ta2O9; Bi4Ti3O12; laser ablation; low substrate temperature;

D O I：

10.1080/10584589608013065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bismuth-layer-structured ferroelectric thin films, SrBi2Ta2O9 and Bi4Ti3O12, have been prepared by laser ablation method on both Pt sheets and Si wafers at low temperatures of 400 similar to 500 degrees C. These thin films have been characterized by XRD, XPS, AFM, C-V, D-E hysteresis and J-V measurement. SrBi2Ta2O9 thin films have a good (105) preferential orientation, and Bi4Ti3O12 thin films have (117) and c-axis orientation on these substrates. Ferroelectric film-SiO2-Si structures show good C-V hysteresis curve owing to Si surface potential controlled by the D-E hysteresis. D-E hysteresis is obtained in Bi4Ti3O12 thin film prepared on Pt sheet, and the remnant polarization and the coercive force are 7.5 mu C/cm(2) and 72 kV/cm, respectively.

引用

页码：225 / 232

页数：8

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