Bismuth titanate thin films on Si with buffer layers prepared by laser ablation and their electrical properties

Bismuth titanate thin films are grown on SiO2/Si and Pt substrates at temperatures oi 300-500 degrees C by the laser ablation method, and their structural and electrical properties investigated. The films prepared on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO2/Si substrates orient preferentially along the c-axis and (117) direction, respectively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film. Current-voltage characteristics bismuth titanate films on Pt and BTO/Si substrates show low leakage current.