Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs

被引：22

作者：

Domke, C ^{[1
]}

Ebert, P ^{[1
]}

Urban, K ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.57.4482

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We identified point defects and dopant atoms and measured their concentrations in as-grown and post-growth annealed highly Si-doped GaAs by scanning tunneling microscopy. The annealing under As atmosphere reduces the concentration of Si atoms incorporated into Si pairs and clusters by cluster dissolution, while the concentrations of Si donors, Si donor-Ga vacancy complexes, and Si donor-As vacancy complexes increase. For the dissolution of the Si clusters during heat treatment, a Ga-vacancy-mediated mechanism is suggested. [S0163-1829(98)03408-0].

引用

页码：4482 / 4485

页数：4

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