1.3μm GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR)

被引：18

作者：

Mukaihara, T ^{[1
]}

Yamanaka, N ^{[1
]}

Iwai, N ^{[1
]}

Ishikawa, T ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 220, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 09期

关键词：

D O I：

10.1049/el:19980663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and demonstration of a novel integrated laser with a butt-coupled waveguide and a semiconductor/air Bragg reflector (SABAR) are presented. The SABAR is loaded into the butt-coupled waveguide to reduce the diffraction loss. Experimentally obtained SABAR reflectivity is estimated to br > 90%. The butt-coupled interface and SABAR are successfully Formed, resulting in low threshold GaInAsP integrated lasers.

引用

页码：882 / 884

页数：3

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