Settling the "Dead Layer" Debate in Nanoscale Capacitors

被引：90

作者：

Chang, Li-Wu ^{[1
]}

Alexe, Morin ^{[2
]}

Scott, James F. ^{[3
]}

Gregg, J. Marty ^{[1
]}

机构：

[1] Queens Univ Belfast, Sch Math & Phys, Ctr Nanostruct Media, Belfast BT7 1NN, Antrim, North Ireland

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 48期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM CAPACITORS; THICKNESS DEPENDENCE; DIELECTRIC RESPONSE; FERROELECTRICS; (BA; SR)TIO3; MEMORY; FIELD; SIZE;

D O I：

10.1002/adma.200901756

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Permittivity peaks in single crystal thin film capacitors are strongly suppressed compared to bulk in the case of Pt/SrTiO3/Pt, but are relatively unaffected in Pt/BaTiO3/Pt structures. This is consistent with the recent suggestion that subtle variations in interfacial bonding between the dielectric and electrode are critical in determining the presence or absence of inherent dielectric "dead layers".

引用

页码：4911 / +

页数：5

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