Preparation and characterization of Ni-indium tin oxide cosputtered thin films for organic light-emitting diode application

被引：33

作者：

Hsu, CM ^{[1
]}

Lee, JW ^{[1
]}

Meen, TH ^{[1
]}

Wu, WT ^{[1
]}

机构：

[1] So Taiwan Univ Technol, Dept Elect Engn, Yung Kang 710, Tainan Hsien Co, Taiwan

来源：

THIN SOLID FILMS | 2005年 / 474卷 / 1-2期

关键词：

Ni; ITO; OLED; work function;

D O I：

10.1016/j.tsf.2004.08.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of organic light-emitting diode (OLED) can be improved by the doping of nickel (Ni) into indium tin oxide (ITO) anode. Ni-doped ITO films were synthesized using Ni and ITO cosputter approach. Film properties, such as surface roughness, optical transmittance, sheet resistivity, and surface work function, independent of Ni-doping level were examined. Results show that the Ni-doped ITO films perform lower surface roughness and higher surface work function without scarifying the optical transmittance after thermal annealing at 300 degreesC. OLED devices with an Al/tris(8-hydroxyquinoline)aluminum/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'biphenyl-4,4'-diamme/ITO/glass structure were fabricated to investigate the effect of the Ni-doped ITO anode. From the I-V characteristics of the OLED devices, the threshold voltage can be reduced from 12 to 8 V when the Ni atomic concentration is greater than 1.8%. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：19 / 24

页数：6

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