High-power, narrow-ridge, mid-infrared interband cascade lasers

被引：20

作者：

Canedy, C. L. ^{[1
]}

Kim, C. S. ^{[1
]}

Kim, M. ^{[1
]}

Larrabee, D. C. ^{[1
]}

Nolde, J. A. ^{[1
]}

Bewley, W. W. ^{[1
]}

Vurgaftman, I. ^{[1
]}

Meyer, J. R. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

doping; molecular-beam epitaxy; quantum wells; superlattices; laser diodes;

D O I：

10.1016/j.jcrysgro.2006.11.127

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Five-stage interband cascade lasers grown by solid-source molecular-beam epitaxy were processed into ridges of varying width and electroplated with An for improved epitaxial-side-up heat sinking. A 22-mu m ridge emitted 264 mW per facet cw at 80 K (lambda = 3.4 mu m) and 100 mW per facet at 200 K (lambda = 3.6 mu m). A 12-mu m ridge operated cw to a maximum temperature of 257 K (lambda = 3.7 mu m). Beam qualities for the narrowest ridges approach the diffraction limit. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：931 / 934

页数：4

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