Raman spectroscopy of In(Ga)As/GaAs quantum dots

被引：27

作者：

Chu, L ^{[1
]}

Zrenner, A ^{[1
]}

Bichler, M ^{[1
]}

Böhm, G ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1333398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)04951-2].

引用

页码：3944 / 3946

页数：3

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