Preparation and properties of sprayed CuGa0.5In0.5Se2 thin films

被引：9

作者：

Reddy, KTR ^{[1
]}

Chalapathy, RBV ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

thin films; polycrystalline;

D O I：

10.1016/S0927-0248(97)00096-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuGa0.5In0.5Se2 thin films were prepared by spray pyrolysis technique at substrate temperatures (T-s) in the range 100-400 degrees C. The films prepared at T-s = 300-350 degrees C were nearly stoichiometric, polycrystalline with a strong preferred (112) orientation. The resistivity of the films varied in the range, 50-1000 Omega cm and the evaluated optical band gap was 1.35 eV.

引用

页码：19 / 24

页数：6

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