H diffusion for impurity and defect passivation: A physical model for solar cell processing

被引：16

作者：

Sopori, BL ^{[1
]}

Zhang, Y ^{[1
]}

Reedy, R ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190496

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We propose a physical model for diffusion of H in Si containing impurities and defects. The diffusion occurs via several parallel mechanisms, involving complex formation (trapping) and dissociation (detrapping) at impurities and defects, hopping in lattice interstitial sites, and chargestate conversion. The role of bulk and process-induced traps is considered to explain observations from plasma, ion implantation, and PECVD-nitridation processes.

引用

页码：222 / 226

页数：5

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