Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

被引：122

作者：

Ogawa, ET ^{[1
]}

Kim, J ^{[1
]}

Haase, GS ^{[1
]}

Mogul, HC ^{[1
]}

McPherson, JW ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

intermetal dielectrics; intralevel dielectrics; time-dependent dielectric breakdown; TDDB; dielectric reliability; ramped breakdown; low-k dielectrics; low-k reliability; current leakage; percolation model; field acceleration parameter; porosity;

D O I：

10.1109/RELPHY.2003.1197739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability physics of low-k interconnect dielectrics is of great interest. Leakage, breakdown and TDDB data are presented for fluorinated silica, porous carbon-doped silica, and very porous carbon-doped silica. The breakdown and TDDB performance of the dielectrics are observed to degrade with the degree of porosity but the failure kinetics (field acceleration parameter and activation energy) seem to rather insensitive to porosity. A percolation model has been developed whereby the pores are treated as defects. The percolation model seems to describe well the observed breakdown and TDDB behavior.

引用

页码：166 / 172

页数：7

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