Strain-Induced Pseudo-Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles

被引：1365

作者：

Levy, N. ^{[1
,2
]}

Burke, S. A. ^{[1
]}

Meaker, K. L. ^{[1
]}

Panlasigui, M. ^{[1
]}

Zettl, A. ^{[1
,2
]}

Guinea, F. ^{[3
]}

Castro Neto, A. H. ^{[4
]}

Crommie, M. F. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[4] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

SCIENCE | 2010年 / 329卷 / 5991期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SCANNING TUNNELING SPECTROSCOPY; DIRAC-FERMIONS; MEMBRANES; PT(111);

D O I：

10.1126/science.1191700

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C-3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."

引用

页码：544 / 547

页数：4

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