Characterisation of the ultrasonic development process in UVIII resist

被引：16

作者：

Yasin, S

Mumtaz, A

Hasko, DG

Carecenac, F

Ahmed, H

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] CNRS, L2M, Lab Microstruct, F-75700 Paris, France

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00358-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ultrasonically assisted development on the characteristics of electron beam exposed UVIII resist is investigated. Process latitude, ultimate resolution and line edge roughness are seen to be improved compared to conventional dip development. The mechanisms for this improvement are discussed.

引用

收藏

页码：471 / 474

页数：4

相关论文

共 11 条

[1] FABRICATION OF 5-7 NM WIDE ETCHED LINES IN SILICON USING 100 KEV ELECTRON-BEAM LITHOGRAPHY AND POLYMETHYLMETHACRYLATE RESIST [J].

CHEN, W ;

AHMED, H .

APPLIED PHYSICS LETTERS, 1993, 62 (13) :1499-1501

[2] Resolution of polymethyl methacrylate: Molecular weights of 950 000 vs 50 000 [J].

Dobisz, EA ;

Brandow, SL ;

Bass, R ;

Shirey, LM .

APPLIED PHYSICS LETTERS, 1999, 74 (26) :4064-4066

[3] Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists [J].

Itani, T ;

Yoshino, H ;

Hashimoto, S ;

Yamana, M ;

Samoto, N ;

Kasama, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2541-2544

[4] HIGH-RELIABILITY LITHOGRAPHY PERFORMED BY ULTRASONIC AND SURFACTANT-ADDED DEVELOPING SYSTEM [J].

IWAMOTO, T ;

SHIMADA, H ;

SHIMOMURA, S ;

ONODERA, M ;

OHMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :491-495

[5] Ultrasonic and dip resist development processes for 50 nm device fabrication [J].

Lee, KL ;

Bucchignano, J ;

Gelorme, J ;

Viswanathan, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2621-2626

[6] High resolution electron beam lithography studies on Shipley chemically amplified DUV resists [J].

Macintyre, D ;

Thoms, S .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :213-216

[7]

MANCINI DP, 1996, SPIE, P2723

[8] Influence of edge roughness in resist patterns on etched patterns [J].

Namatsu, H ;

Nagase, M ;

Yamaguchi, T ;

Yamazaki, K ;

Kurihara, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3315-3321

[9] LINE-PROFILES IN THICK ELECTRON RESIST LAYERS AND PROXIMITY EFFECT CORRECTION [J].

PHANG, JCH ;

AHMED, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1754-1758

[10] Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography [J].

Reynolds, GW ;

Taylor, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02) :334-344