Single-crystalline silicon lift-off films for metal-oxide-semiconductor devices on arbitrary substrates

被引：6

作者：

Tilke, A

Rotter, M

Blick, RH

Lorenz, H

Kotthaus, JP

机构：

[1] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany

[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a technique to mount single-crystalline silicon thin films on arbitrary substrates. We demonstrate in detail the preparation of a 190-nm-thin silicon metal-oxide-semiconductor field-effect transistor (MOSFET) on a silicon-on-insulator film lifted from its substrate and bonded to quartz. Functioning of this hybrid MOSFET on a rigid surface at room temperature is demonstrated. (C) 2000 American Institute of Physics. [S0003-6951(00)02030-1].

引用

页码：558 / 560

页数：3

共 20 条

[1]

AJMERA A, 1999, P S VLSI TECHN IEEE, P15

[2]

AubertonHerve AJ, 1997, IEICE T ELECTRON, VE80C, P358

[3]

BOHM S, 1997, THESIS L MAXIMILIANS

[4]

CHRISTOLOVEANU S, 1995, ELECT CHARACTERISATI