ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF

被引：11

作者：

FAN, JC ^{[1
]}

LEE, CP ^{[1
]}

HWANG, JA ^{[1
]}

HWANG, JH ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 09期

关键词：

D O I：

10.1109/55.406799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial lift-off (ELO) technique was used for the first time to transplant AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) to Si substrates. Both preprocessed (devices processed before transplantation) and postprocessed (devices processed after transplantation) ELO HBT's On Si were demonstrated in this study. The characteristics of those HBT's on Si with either technique show nearly identical characteristics of the HBT's on GaAs without transplantation, indicating the film quality is maintained after transplantation. Devices with a high current gain of 550 were transplanted without any degradation, and the current gain is not limited by the ELO process. This current gain value is the highest reported for GaAs HBT's on Si with any techniques.

引用

页码：393 / 395

页数：3

共 7 条

[1] ALIGNABLE EPITAXIAL LIFTOFF OF GAAS MATERIALS WITH SELECTIVE DEPOSITION USING POLYIMIDE DIAPHRAGMS [J].