High inversion current in silicon nanowire field effect transistors

被引：73

作者：

Koo, SM ^{[1
]}

Fujiwara, A

Han, JP

Vogel, EM

Richter, CA

Bonevich, JE

机构：

[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[3] Natl Inst Stand & Technol, Div Met, Gaithersburg, MD 20899 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 11期

关键词：

D O I：

10.1021/nl0486517

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional "top-down" approach by using electron-beam lithography. The SiNW device shows higher inversion channel current density than the control devices. The extracted electron inversion mobility of the 20 nm width nanowire channel (approximate to1000 cm(2)/Ns) is found to be 2 times higher than that of the reference MOSFET (approximate to480 cm(2)Vs) of large dimension (W greater than or equal to 1 mum). We attribute this mobility increase to strain-induced changes in the band structure of the SiNW after oxidation.

引用

页码：2197 / 2201

页数：5

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