Kinetics and characterization of plasma grown aluminium oxide

The anodization of aluminium in a microwave excited O-2 plasma has been studied at temperatures less than 100 degrees C. Thirty nanometers of oxide were grown in times substantially less than one hour. The growth kinetics follow those expected using the constant current growth mode. X-ray diffraction, Fourier transform infrared absorption, X-ray photoelectron spectroscopy, Auger electron spectroscopy, and electrical studies were carried out. The oxide is amorphous and stoichiometric, the as-grown films have high electrical conductivity. The method may be well suited for the formation of protective coatings. (C) 1998 American Institute of Physics.