CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-PLASMA ANODIC AL2O3-GAAS DIODES

被引：6

作者：

HIRAYAMA, Y

KOSHIGA, F

SUGANO, T

机构：

来源：

关键词：

D O I：

10.1063/1.329353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4697 / 4699

页数：3

共 5 条

[1] STUDY OF THE PROPERTIES OF GAAS-ANODIC AL2O3 INTERFACES [J].

BAYRAKTAROGLU, B ;

SCHUERMEYER, FL ;

GRANT, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1483-1486

HAYASHI, H ;

KIKUCHI, K ;

YAMAGUCHI, T .

[3] CHEMICAL-REACTIONS OF OXIDE LAYERS ON GAAS [J].

LANGER, DW ;

SCHUERMEYER, FL ;

JOHNSON, RL ;

SINGH, HP ;

LITTON, CW ;

HARTNAGEL, HL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :964-966

[4] GAAS-TA2O5 AND GAAS-AL2O3 INTERFACE STRUCTURES [J].

NISHI, H ;

REVESZ, AG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1487-1491

[5] ANODIC-OXIDATION OF GAAS USING OXYGEN PLASMA [J].

YAMASAKI, K ;

SUGANO, T .