Formation of cubic boron nitride by the reactive sputter deposition of boron

被引：26

作者：

Jankowski, AF ^{[1
]}

Hayes, JP ^{[1
]}

Makowiecki, DM ^{[1
]}

McKernan, MA ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

THIN SOLID FILMS | 1997年 / 308卷

关键词：

boron nitride films; Rf magnetron sputtering; boron;

D O I：

10.1016/S0040-6090(97)00395-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron nitride films are synthesized by rf magnetron sputtering baron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Anger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and X-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bending, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline boron nitride (BN) phases. The deposition of stable and adherent baron nitride coatings consisting of the cubic phase requires 400 degrees C substrate heating and the application of a 300-V negative bias. Published by Elsevier Science S.A.

引用

页码：94 / 100

页数：7

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