Carrier Localization on Surfaces of Organic Semiconductors Gated with Electrolytes

被引：74

作者：

Xia, Yu ^{[1
]}

Xie, Wei ^{[1
]}

Ruden, P. Paul ^{[2
]}

Frisbie, C. Daniel ^{[1
]}

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 03期

关键词：

POLYMER; SUPERCONDUCTIVITY; TRANSPORT; CRYSTAL;

D O I：

10.1103/PhysRevLett.105.036802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Organic semiconductor single crystals gated with electrolytes exhibit a pronounced maximum in channel conductance at hole densities > 10(13) cm(-2). The cause is a strong decrease in the hole mobility with increasing charge density, which is explained in terms of a percolation model that incorporates trapping of holes by ions at the semiconductor-electrolyte interface. In the case of rubrene crystals, the peak channel conductance occurs at hole densities near 3 x 10(13) cm(-2). The magnitude of the effect will be large for semiconductors with low dielectric constants and narrow bandwidths, and thus is likely to be a general phenomenon in organic semiconductors gated with electrolytes.

引用

页数：4

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