Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

被引：122

作者：

Kalb, Wolfgang L. ^{[1
]}

Mattenberger, Kurt ^{[1
]}

Batlogg, Bertram ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.78.035334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the samples to ambient air. Photo-oxidation of pentacene is shown to lead to a peak of trap states centered at 0.28 eV from the mobility edge, with trap densities of the order of 10(18) cm(-3). As the gate voltage is ramped up, these trap states are occupied at first and cause a reduction in the number of free carriers at a given gate voltage. Moreover, the exposure to oxygen reduces the mobility of the charge carriers above the mobility edge. We correlate the change of these transport parameters with the change of the essential device parameters, i.e., subthreshold performance and effective field-effect mobility. This study supports the assumption of a mobility edge for charge transport and contributes to a detailed understanding of an important degradation mechanism of organic field-effect transistors. Deep traps in an organic field-effect transistor reduce the effective field-effect mobility by reducing the number of free carriers and their mobility above the mobility edge.

引用

页数：11

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