High performance ZnSTe photovoltaic visible-blind ultraviolet detectors

被引：22

作者：

Sou, IK ^{[1
]}

Man, CL ^{[1
]}

Ma, ZH ^{[1
]}

Yang, Z ^{[1
]}

Wong, GKL ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnS1-xTex-based Schottky photodiodes have been fabricated on various substrates using the molecular beam epitaxy technique. The photovoltage output of these photovoltaic devices is determined using Fourier transform interferometric spectroscopy. The results show that these devices (with Te<10%) are highly sensitive in the ultraviolet but are visible blind. An external quantum efficiency of over 50% has been achieved on a device grown on a GaP substrate and over 40% on a Si substrate. (C) 1997 American Institute of Physics. [S0003-6951(97)04052-7].

引用

页码：3847 / 3849

页数：3

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