PHOTOLUMINESCENCE AND ELECTROREFLECTANCE OF GAP/AIP SUPERLATTICES GROWN BY GAS SOURCE MBE

被引：12

作者：

ASAMI, K ^{[1
]}

ASAHI, H ^{[1
]}

WATANABE, T ^{[1
]}

GONDA, S ^{[1
]}

OKUMURA, H ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91174-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the growth of GaP/AlP short period superlattices (SL) by gas source molecular beam epitaxy and the results on the photoluminescence (PL) and electroreflectance (ER) measurements. The (GaP)n/(AlP)n (n = 3 and 5) SL structures are grown on GaP(001) substrates at 600-degrees-C. PL spectr at 4.2 K show the characteristic peaks caused by the SL structures at 2.26 eV for (GaP)5/(AlP)5 and 2.29 eV for (GaP)3/(AlP)3. ER spectra at 300 K show the band-gap energies at 2.17 eV for (GaP)5/(AlP)5 and 2.20 eV for (GaP)3/(AlP)3. Comparing the band-gap energies determined experimentally with those predicted theoretically for the case of type I and type II, it is found that the GaP/AlP heterostructure has a type II band line-up.

引用

页码：450 / 453

页数：4

共 8 条

[1] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES [J].