ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES

被引：80

作者：

WONG, KB

JAROS, M

MORRISON, I

HAGON, JP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.60.2221

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2221 / 2224

页数：4

共 10 条

[1] NEW OPTICAL-TRANSITIONS IN SI-GE STRAINED SUPERLATTICES [J].

BREY, L ;

TEJEDOR, C .

PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1022-1025

[2]

FROYEN S, 1987, PHYS REV B, V36, P4574

[3] THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J].

HYBERTSEN, MS ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1987, 36 (18) :9683-9693

[4] EPITAXIAL-GROWTH OF GEXSI1-X ON SI - A DIRECT MONTE-CARLO SIMULATION [J].

KOBAYASHI, A ;

DASSARMA, S .

PHYSICAL REVIEW B, 1988, 37 (02) :1039-1042

[5] STRAIN-INDUCED CONFINEMENT IN SI0.75GE0.25 (SI/SI0.5GE0.5) (001) SUPERLATTICE SYSTEMS [J].

MORRISON, I ;

JAROS, M ;

WONG, KB .

PHYSICAL REVIEW B, 1987, 35 (18) :9693-9707

[6] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].

PEARSALL, TP ;

BEVK, J ;

FELDMAN, LC ;

BONAR, JM ;

MANNAERTS, JP ;

OURMAZD, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732

[7] CORRECTION [J].

PEARSALL, TP .

PHYSICAL REVIEW LETTERS, 1987, 58 (10) :1053-1053

[8] INDIRECT, QUASI-DIRECT, AND DIRECT OPTICAL-TRANSITIONS IN THE PSEUDOMORPHIC (4X4)-MONOLAYER SI-GE STRAINED-LAYER SUPERLATTICE ON SI(001) [J].

PEOPLE, R ;

JACKSON, SA .

PHYSICAL REVIEW B, 1987, 36 (02) :1310-1313

[9] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J].

VAN DE WALLE, CG ;

MARTIN, RM .

PHYSICAL REVIEW B, 1986, 34 (08) :5621-5634

[10] CONFINED ELECTRON-STATES IN GAAS-GA1-XALXAS (0.2 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1.0) SUPERLATTICES [J].

WONG, KB ;

JAROS, M ;

GELL, MA ;

NINNO, D .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (01) :53-65

← 1 →